PMPB23XNEZ

NXP Semiconductors

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PMPB23XNEZ

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Package:

DFN2020MD-6

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Description:

PMPB23XNE - 20 V, SINGLE N-CHANN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1136 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	22mOhm @ 7A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	DFN2020MD-6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.7W (Ta)
Series	-
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk