PSMN006-20K,518

Nexperia USA Inc.

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PSMN006-20K,518

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Package:

8-SO

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Description:

MOSFET N-CH 20V 32A 8SO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 2.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	700mV @ 1mA (Typ)
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	8.3W (Tc)
Series	TrenchMOS™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)