RJK0222DNS-00#J5

Renesas Electronics America Inc

Product No:

RJK0222DNS-00#J5

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Package:

8-DFN (5x6)

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Description:

POWER FIELD-EFFECT TRANSISTOR

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate, 4.5V Drive
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.2mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	8-DFN (5x6)
Drain to Source Voltage (Vdss)	25V
Series	-
Package / Case	8-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Power - Max	8W, 10W
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	14A, 16A
Package	Bulk
Base Product Number	RJK0222