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RJS6004WDPK-00#T0

Renesas Electronics America Inc

Product No:

RJS6004WDPK-00#T0

Package:

TO-3P

Batch:

-

Datasheet:

-

Description:

DIODE GEN PURP 600V 20A

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 15 ns
Mounting Type Through Hole
Product Status Obsolete
Supplier Device Package TO-3P
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Series -
Package / Case TO-220-3 Full Pack
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Diode Configuration 1 Pair Common Cathode
Mfr Renesas Electronics America Inc
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tube
Current - Average Rectified (Io) (per Diode) 10A (DC)
Operating Temperature - Junction -55°C ~ 150°C