RN1313,LF

Toshiba Semiconductor and Storage

Product No:

RN1313,LF

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USM

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Description:

PB-F BIAS RESISTOR BUILT-IN TRAN

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Frequency - Transition	250 MHz
Current - Collector (Ic) (Max)	100 mA
Resistor - Base (R1)	47 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	USM
Series	Automotive, AEC-Q101
Transistor Type	NPN - Pre-Biased
Package / Case	SC-70, SOT-323
Power - Max	100 mW
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Base Product Number	RN1313