RN1710,LF

Toshiba Semiconductor and Storage

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RN1710,LF

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USV

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Description:

NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.

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Frequency - Transition	250MHz
Current - Collector (Ic) (Max)	100mA
Resistor - Base (R1)	4.7kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	USV
Series	-
Transistor Type	2 NPN - Pre-Biased (Dual)
Package / Case	5-TSSOP, SC-70-5, SOT-353
Power - Max	200mW
Resistor - Emitter Base (R2)	-
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Base Product Number	RN1710