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RN1968FE(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

RN1968FE(TE85L,F)

Package:

ES6

Batch:

-

Datasheet:

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Description:

TRANS 2NPN PREBIAS 0.1W ES6

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Frequency - Transition 250MHz
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 22kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Mounting Type Surface Mount
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 50V
Supplier Device Package ES6
Series -
Transistor Type 2 NPN - Pre-Biased (Dual)
Package / Case SOT-563, SOT-666
Power - Max 100mW
Resistor - Emitter Base (R2) 47kOhms
Mfr Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max) 100nA (ICBO)
Package Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Base Product Number RN1968