SF62GHB0G

Taiwan Semiconductor Corporation

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SF62GHB0G

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Package:

DO-201AD

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Description:

DIODE GEN PURP 100V 6A DO201AD

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	100pF @ 4V, 1MHz
Reverse Recovery Time (trr)	35 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	DO-201AD
Current - Reverse Leakage @ Vr	5 µA @ 100 V
Series	Automotive, AEC-Q101
Package / Case	DO-201AD, Axial
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	975 mV @ 6 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Bulk
Current - Average Rectified (Io)	6A
Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	SF62