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SI1304BDL-T1-GE3

Vishay Siliconix

Product No:

SI1304BDL-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SC-70-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 900MA SC70-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 2.7 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 270mOhm @ 900mA, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.3V @ 250µA
Supplier Device Package SC-70-3
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 340mW (Ta), 370mW (Tc)
Series TrenchFET®
Package / Case SC-70, SOT-323
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 900mA (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI1304