SI1926DL-T1-GE3

Vishay Siliconix

Product No:

SI1926DL-T1-GE3

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Package:

SC-70-6

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Description:

MOSFET 2N-CH 60V 0.37A SOT363

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.4Ohm @ 340mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SC-70-6
Drain to Source Voltage (Vdss)	60V
Series	TrenchFET®
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	510mW
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	370mA
Package	Tape & Reel (TR)
Base Product Number	SI1926