SI3493BDV-T1-GE3

Vishay Siliconix

Product No:

SI3493BDV-T1-GE3

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Package:

6-TSOP

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Description:

MOSFET P-CH 20V 8A 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1805 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	43.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	27.5mOhm @ 7A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.08W (Ta), 2.97W (Tc)
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI3493