SI3529DV-T1-GE3

Vishay Siliconix

Product No:

SI3529DV-T1-GE3

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Package:

6-TSOP

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Description:

MOSFET N/P-CH 40V 2.5A 6-TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	205pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 2.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	40V
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Power - Max	1.4W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	2.5A, 1.95A
Package	Tape & Reel (TR)
Base Product Number	SI3529