SI3909DV-T1-E3

Vishay Siliconix

Product No:

SI3909DV-T1-E3

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Package:

6-TSOP

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Description:

MOSFET 2P-CH 20V 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	200mOhm @ 1.8A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	500mV @ 250µA (Min)
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Power - Max	1.15W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	-
Package	Tape & Reel (TR)
Base Product Number	SI3909