SI4500BDY-T1-GE3

Vishay Siliconix

Product No:

SI4500BDY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET N/P-CH 20V 6.6A 8-SOIC

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FET Feature	Logic Level Gate
Configuration	N and P-Channel, Common Drain
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 9.1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	1.3W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	6.6A, 3.8A
Package	Cut Tape (CT)
Base Product Number	SI4500