SI4559ADY-T1-GE3

Vishay Siliconix

Product No:

SI4559ADY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET N/P-CH 60V 5.3A 8-SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 15V, 650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V, 22nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	58mOhm @ 4.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	60V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	3.1W, 3.4W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	5.3A, 3.9A
Package	Tape & Reel (TR)
Base Product Number	SI4559