SI4967DY-T1-GE3

Vishay Siliconix

Product No:

SI4967DY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET 2P-CH 12V 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	23mOhm @ 7.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	12V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	-
Package	Tape & Reel (TR)
Base Product Number	SI4967