SI5441DC-T1-GE3

Vishay Siliconix

Product No:

SI5441DC-T1-GE3

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Package:

1206-8 ChipFET™

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Description:

MOSFET P-CH 20V 3.9A 1206-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	55mOhm @ 3.9A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.3W (Ta)
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI5441