SI5509DC-T1-GE3

Vishay Siliconix

Product No:

SI5509DC-T1-GE3

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Package:

1206-8 ChipFET™

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Description:

MOSFET N/P-CH 20V 6.1A 1206-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	52mOhm @ 5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	4.5W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	6.1A, 4.8A
Package	Tape & Reel (TR)
Base Product Number	SI5509