SIA430DJ-T4-GE3

Vishay Siliconix

Product No:

SIA430DJ-T4-GE3

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Package:

PowerPAK® SC-70-6

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Description:

MOSFET N-CH 20V 12A/12A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13.5mOhm @ 7A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	PowerPAK® SC-70-6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	3.5W (Ta), 19.2W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 12A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIA430