SIR5211DP-T1-GE3

Vishay Siliconix

Product No:

SIR5211DP-T1-GE3

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PowerPAK® SO-8

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Description:

P-CHANNEL 20 V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.2mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	5W (Ta), 56.8W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	31.2A (Ta), 105A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)