SIS932EDN-T1-GE3

Vishay Siliconix

Product No:

SIS932EDN-T1-GE3

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Package:

PowerPAK® 1212-8 Dual

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Description:

MOSFET N-CH DL 30V PWRPAK 1212-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	22mOhm @ 10A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	PowerPAK® 1212-8 Dual
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Power - Max	2.6W (Ta), 23W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIS932