SISF06DN-T1-GE3

Vishay Siliconix

Product No:

SISF06DN-T1-GE3

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PowerPAK® 1212-8SCD

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Description:

COMMON-DRAIN DUAL N-CH 30V (S1-S

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual) Common Drain
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 250µA
Supplier Device Package	PowerPAK® 1212-8SCD
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8SCD
Technology	MOSFET (Metal Oxide)
Power - Max	5.2W (Ta), 69.4W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	28A (Ta), 101A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SISF06