SISF20DN-T1-GE3

Vishay Siliconix

Product No:

SISF20DN-T1-GE3

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PowerPAK® 1212-8SCD Dual

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Description:

MOSFET DL N-CH 60V PPK 1212-8SCD

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	PowerPAK® 1212-8SCD Dual
Drain to Source Voltage (Vdss)	60V
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8SCD Dual
Technology	MOSFET (Metal Oxide)
Power - Max	5.2W (Ta), 69.4W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 52A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SISF20