SIZF360DT-T1-GE3

Vishay Siliconix

Product No:

SIZF360DT-T1-GE3

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Package:

6-PowerPair™

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Description:

MOSFET DL N-CH 30V PPAIR 3X3FDC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V, 3150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 62nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	6-PowerPair™
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET® Gen IV
Package / Case	6-PowerPair™
Technology	MOSFET (Metal Oxide)
Power - Max	3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIZF360