SIZF918DT-T1-GE3

Vishay Siliconix

Product No:

SIZF918DT-T1-GE3

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Package:

8-PowerPair® (6x5)

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Description:

MOSFET DUAL N-CH 30V POWERPAIR 6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds	1060pF @ 15V, 2650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 56nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA, 2.3V @ 250µA
Supplier Device Package	8-PowerPair® (6x5)
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET® Gen IV
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIZF918