SQ4153EY-T1_GE3

Vishay Siliconix

Product No:

SQ4153EY-T1_GE3

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Package:

8-SOIC

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Description:

MOSFET P-CHANNEL 12V 25A 8SOIC

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.32mOhm @ 14A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	7.1W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SQ4153