SQSA80ENW-T1_GE3

Vishay Siliconix

Product No:

SQSA80ENW-T1_GE3

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PowerPAK® 1212-8

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Description:

MOSFET N-CH 80V 18A PPAK1212-8

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1358 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	21mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	62.5W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQSA80