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TLP291(GB,E)

Toshiba Semiconductor and Storage

Product No:

TLP291(GB,E)

Package:

4-SO

Batch:

-

Datasheet:

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Description:

TLP291(GB,E)

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 110°C
Input Type DC
Current Transfer Ratio (Max) 600% @ 5mA
Rise / Fall Time (Typ) 2µs, 3µs
Output Type Transistor
Voltage - Isolation 3750Vrms
Voltage - Output (Max) 80V
Mounting Type Surface Mount
Product Status Active
Supplier Device Package 4-SO
Series -
Package / Case 4-SOIC (0.179", 4.55mm Width)
Number of Channels 1
Current Transfer Ratio (Min) 100% @ 5mA
Mfr Toshiba Semiconductor and Storage
Voltage - Forward (Vf) (Typ) 1.25V
Package Tube
Turn On / Turn Off Time (Typ) 3µs, 3µs
Current - Output / Channel 50mA
Vce Saturation (Max) 300mV
Current - DC Forward (If) (Max) 50 mA
Base Product Number TLP291