TSM6502CR

Taiwan Semiconductor Corporation

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TSM6502CR

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Package:

8-PDFN (5x6)

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Description:

-60V, -18A, COMPLEMENTARY P-CHAN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1159pF @ 30V, 930pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	10.3nC @ 4.5V, 9.5nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (5x6)
Drain to Source Voltage (Vdss)	60V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	40W
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	24A (Tc), 18A (Tc)
Package	Tape & Reel (TR)
Base Product Number	TSM6502