UGB8FT-E3/45

Vishay General Semiconductor - Diodes Division

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UGB8FT-E3/45

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Package:

TO-263AB

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Description:

DIODE GEN PURP 300V 8A TO263AB

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	-
Reverse Recovery Time (trr)	50 ns
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	TO-263AB
Current - Reverse Leakage @ Vr	10 µA @ 300 V
Series	Automotive, AEC-Q101
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 8 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	300 V
Package	Bulk
Operating Temperature - Junction	-40°C ~ 150°C
Current - Average Rectified (Io)	8A