WNSC2D08650TJ

WeEn Semiconductors

Product No:

WNSC2D08650TJ

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Package:

5-DFN (8x8)

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Description:

DIODE SIL CARBIDE 650V 8A 5DFN

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	260pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	5-DFN (8x8)
Current - Reverse Leakage @ Vr	40 µA @ 650 V
Series	-
Package / Case	4-VSFN Exposed Pad
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Mfr	WeEn Semiconductors
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	175°C
Base Product Number	WNSC2