WNSC5D12650T6J

WeEn Semiconductors

Product No:

WNSC5D12650T6J

Manufacturer:

Package:

5-DFN (8x8)

Batch:

Datasheet:

Description:

DIODE SIL CARBIDE 650V 12A 5DFN

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	420pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	5-DFN (8x8)
Current - Reverse Leakage @ Vr	60 µA @ 650 V
Series	-
Package / Case	4-VSFN Exposed Pad
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 12 A
Mfr	WeEn Semiconductors
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	12A
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	WNSC5