2SJ635-TL-E

onsemi

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2SJ635-TL-E

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2SJ635 - P-CHANNEL SILICON MOSFE

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	60mOhm @ 6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.6V @ 1mA
Supplier Device Package	TP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1W (Ta), 30W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk