Single FETs, MOSFETs(41,022)

Manufacturer

ANBON SEMICONDUCTOR (INT'L) LIMITED

false

Alpha & Omega Semiconductor Inc.

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Analog Devices Inc.

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Bruckewell

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Catalyst Semiconductor Inc.

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Central Semiconductor Corp

false

Comchip Technology

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CoolCAD

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Cypress Semiconductor Corp

false

Diodes Incorporated

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Package

10-PolarPAK® (L)
10-PolarPAK® (LH)
10-PolarPAK® (M)
10-PolarPAK® (S)
10-PolarPAK® (SH)
10-PolarPAK® (U)
10-PowerSO
10-TCPAK
12-BGA (2x2.5)
1206-8 ChipFET™

Series

*
-
18N20
Alliance Plastics, BTS
AlphaMOS
AlphaSGT2™
AlphaSGT™
Automotive
Automotive, AEC-Q100
Automotive, AEC-Q100, NexFET™

FET Type

-
N-Channel
P-Channel

Vgs (Max)

+0.6V, -12V
+10V, -20V
+10V, -5V
+10V, -8V
+12V, -20V
+12V, -5V
+12V, -6V
+12V, -8V
+15V, -4V
+16V, -10V

Technology

-
GaNFET (Cascode Gallium Nitride FET)
GaNFET (Gallium Nitride)
MOSFET (Metal Oxide)
SiC (Silicon Carbide Junction Transistor)
SiCFET (Cascode SiCJFET)
SiCFET (Silicon Carbide)

FET Feature

-
Current Sensing
Depletion Mode
Schottky Diode (Body)
Schottky Diode (Isolated)
Standard
Temperature Sensing Diode

Mounting Type

-
Chassis Mount
Surface Mount
Surface Mount, Wettable Flank
Through Hole

Vgs(th) (Max) @ Id

-
0.75V @ 1mA
0.8V @ 1mA
0.8V @ 250µA
0.95V @ 250µA
1.05V @ 1mA
1.05V @ 250µA
1.06V @ 250µA
1.15V @ 250µA
1.1V @ 100µA

Operating Temperature

-
-25°C ~ 125°C (TJ)
-25°C ~ 150°C (TJ)
-40°C ~ 110°C (TA)
-40°C ~ 125°C (TJ)
-40°C ~ 150°C (TJ)
-40°C ~ 175°C (TJ)
-40°C ~ 85°C (TA)
-50°C ~ 150°C (TJ)
-50°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

-
0.29mOhm @ 50A, 10V
0.35mOhm @ 50A, 10V
0.3mOhm @ 200A, 10V
0.42mOhm @ 50A, 10V
0.44mOhm @ 88A, 10V
0.45mOhm @ 30A, 10V
0.45mOhm @ 50A, 10V
0.45mOhm @ 60A, 4.5V
0.47mOhm @ 20A, 10V

Power Dissipation (Max)

-
1.04W (Ta), 20.8W (Tc)
1.04W (Ta), 45W (Tc)
1.04W (Ta), 53W (Tc)
1.04W (Ta), 62.5W (Tc)
1.04W (Ta), 68W (Tc)
1.04W (Ta), 75W (Tc)
1.04kW (Tc)
1.05W
1.05W (Ta)

Gate Charge (Qg) (Max) @ Vgs

0.044 nC @ 5 V
0.12 nC @ 5 V
0.18 nC @ 10 V
0.2 nC @ 8 V
0.22 nC @ 4.5 V
0.281 nC @ 10 V
0.3 nC @ 4.5 V
0.31 nC @ 10 V
0.31 nC @ 4.5 V
0.34 nC @ 4.5 V

Drain to Source Voltage (Vdss)

1.5 kV
10 V
100 V
1000 V
105 V
1050 V
108 V
110 V
1100 V
115 V

Input Capacitance (Ciss) (Max) @ Vds

10 pF @ 0 V
10 pF @ 10 V
10 pF @ 25 V
10 pF @ 3 V
10 pF @ 40 V
10.5 pF @ 10 V
100 pF @ 10 V
100 pF @ 12 V
100 pF @ 15 V
100 pF @ 16 V

Drive Voltage (Max Rds On, Min Rds On)

-
0.35V
0.9V, 2.5V
0.9V, 4.5V
0V
0V, 10V
0V, 6V
1.2V, 10V
1.2V, 2.5V
1.2V, 3V

Current - Continuous Drain (Id) @ 25°C

-
1.02A (Tc)
1.03A (Tc)
1.05A (Ta)
1.06A (Ta)
1.13A (Ta)
1.13A (Tc)
1.15A
1.15A (Ta)
1.16A (Tc)
Filter results: 41,022
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Product Manufacturer Package Batch RoHS Effective inventory Quantity RFQ
FF2000XTR17IE5BPSA1

FF2000XTR17IE5BPSA1

FF2000XTR17IE5BPSA1

Infineon Technologies

-

-

RFQ

Infineon Technologies

- - - -
FF1700XTR17IE5DBPSA1

FF1700XTR17IE5DBPSA1

FF1700XTR17IE5DBPSA1

Infineon Technologies

-

-

RFQ

Infineon Technologies

- - - -
BSM400C12P3G202

BSM400C12P3G202

BSM400C12P3G202

Rohm Semiconductor

Module

-

RFQ

Rohm Semiconductor

Module - rohs.png -
BSM300C12P3E201

BSM300C12P3E201

BSM300C12P3E201

Rohm Semiconductor

Module

-

RFQ

Rohm Semiconductor

Module - rohs.png -
BSM180C12P2E202

BSM180C12P2E202

BSM180C12P2E202

Rohm Semiconductor

Module

-

RFQ

Rohm Semiconductor

Module - rohs.png -
6BP16-2

6BP16-2

6BP16-2

Analog Devices Inc.

-

-

RFQ

Analog Devices Inc.

- - - -
BSM180C12P3C202

BSM180C12P3C202

BSM180C12P3C202

Rohm Semiconductor

Module

-

RFQ

Rohm Semiconductor

Module - rohs.png -
APTM100UM45DAG

APTM100UM45DAG

APTM100UM45DAG

Microchip Technology

SP6

-

RFQ

Microchip Technology

SP6 - rohs.png -
JANSR2N7292

JANSR2N7292

JANSR2N7292

Harris Corporation

TO-254AA

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RFQ

Harris Corporation

TO-254AA - rohs.png -
IXFN90N170SK

IXFN90N170SK

IXFN90N170SK

IXYS

SOT-227B

-

RFQ

IXYS

SOT-227B - rohs.png -