Rohm Semiconductor
Product No:
BSM180C12P3C202
Manufacturer:
Package:
Module
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1200V 180A MODULE
Quantity:
Delivery:
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 10 V |
Mounting Type | Chassis Mount |
Rds On (Max) @ Id, Vgs | - |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.6V @ 50mA |
Supplier Device Package | Module |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 880W (Tc) |
Series | - |
Package / Case | Module |
Technology | SiCFET (Silicon Carbide) |
Mfr | Rohm Semiconductor |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Vgs (Max) | +22V, -4V |
Drive Voltage (Max Rds On, Min Rds On) | - |
Package | Bulk |
Base Product Number | BSM180 |