minImg

BSM180C12P3C202

Rohm Semiconductor

Product No:

BSM180C12P3C202

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1200V 180A MODULE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif10

Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 50mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 880W (Tc)
Series -
Package / Case Module
Technology SiCFET (Silicon Carbide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Vgs (Max) +22V, -4V
Drive Voltage (Max Rds On, Min Rds On) -
Package Bulk
Base Product Number BSM180