ES6U3T2CR

Rohm Semiconductor

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ES6U3T2CR

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Package:

6-WEMT

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Description:

MOSFET N-CH 30V 1.4A WEMT6

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	70 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	240mOhm @ 1.4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	6-WEMT
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	800mW (Ta)
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)