Rohm Semiconductor
Product No:
ES6U1T2R
Manufacturer:
Package:
6-WEMT
Batch:
-
Datasheet:
-
Description:
MOSFET P-CH 12V 1.3A 6WEMT
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Operating Temperature | 150°C (TJ) |
FET Feature | Schottky Diode (Isolated) |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 6 V |
Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Supplier Device Package | 6-WEMT |
Drain to Source Voltage (Vdss) | 12 V |
Power Dissipation (Max) | 700mW (Ta) |
Series | - |
Package / Case | 6-SMD, Flat Leads |
Technology | MOSFET (Metal Oxide) |
Mfr | Rohm Semiconductor |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Vgs (Max) | ±10V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Package | Tape & Reel (TR) |