BSM180C12P2E202

Rohm Semiconductor

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BSM180C12P2E202

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Module

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SICFET N-CH 1200V 204A MODULE

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 35.2mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	1360W (Tc)
Series	-
Package / Case	Module
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tray
Base Product Number	BSM180