APTM120DA56T1G

Microsemi Corporation

Product No:

APTM120DA56T1G

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Package:

SP1

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Description:

MOSFET N-CH 1200V 18A SP1

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7736 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	672mOhm @ 14A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 2.5mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	390W (Tc)
Series	-
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk