AUIRF7675M2TR

International Rectifier

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AUIRF7675M2TR

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DirectFET™ Isometric M2

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AUIRF7675M2 - 120V-300V N-CHANNE

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	56mOhm @ 11A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 100µA
Supplier Device Package	DirectFET™ Isometric M2
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	2.7W (Ta), 45W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric M2
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	4.4A (Ta), 18A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk