FCA20N60-F109

onsemi

Product No:

FCA20N60-F109

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TO-3PN

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Description:

MOSFET N-CH 600V 20A TO3PN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-3PN
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	208W (Tc)
Series	SuperFET™
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FCA20N60