FCD600N65S3R0

onsemi

Product No:

FCD600N65S3R0

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Package:

D-PAK (TO-252)

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Description:

MOSFET N-CH 650V 6A DPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	465 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4.5V @ 600µA
Supplier Device Package	D-PAK (TO-252)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	54W (Tc)
Series	SuperFET® III
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FCD600