FDB28N30TM

Fairchild Semiconductor

Product No:

FDB28N30TM

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Package:

D2PAK (TO-263)

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Description:

POWER FIELD-EFFECT TRANSISTOR, 2

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	129mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	300 V
Power Dissipation (Max)	250W (Tc)
Series	UniFET™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk