FDD3570

Fairchild Semiconductor

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FDD3570

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Package:

TO-252, (D-Pak)

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Description:

MOSFET N-CH 80V 10A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	3.4W (Ta), 69W (Tc)
Series	PowerTrench®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk