FDD6680AS

Fairchild Semiconductor

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FDD6680AS

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TO-252, (D-Pak)

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Description:

MOSFET N-CH 30V 55A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.5mOhm @ 12.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	60W (Ta)
Series	PowerTrench®, SyncFET™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk