FDI045N10A

Fairchild Semiconductor

Product No:

FDI045N10A

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Package:

I2PAK (TO-262)

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Description:

MOSFET N-CH 100V 120A I2PAK-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.5mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	263W (Tc)
Series	PowerTrench®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	FDI045