FDMS7672AS

Fairchild Semiconductor

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FDMS7672AS

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Package:

8-PQFN (5x6)

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 18A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta), 46W (Tc)
Series	PowerTrench®, SyncFET™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 42A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk