FDN5618P_G

onsemi

Product No:

FDN5618P_G

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Package:

SOT-23-3

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Description:

MOSFET P-CH 60V 1.25A SUPERSOT3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	13.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	170mOhm @ 1.25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	500mW (Ta)
Series	PowerTrench®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	1.25A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk
Base Product Number	FDN561