FDU7N60NZTU

Fairchild Semiconductor

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FDU7N60NZTU

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I-PAK

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MOSFET N-CH 600V 5.5A I-PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.25Ohm @ 2.75A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	90W (Tc)
Series	UniFET-II™
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk