FDZ3N513ZT

onsemi

Product No:

FDZ3N513ZT

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Package:

4-WLCSP (0.96x0.96)

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Description:

MOSFET N-CH 30V 1.1A 4WLCSP

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Operating Temperature	-55°C ~ 125°C (TJ)
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	85 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	462mOhm @ 300mA, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	4-WLCSP (0.96x0.96)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	4-UFBGA, WLCSP
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Vgs (Max)	+5.5V, -0.3V
Drive Voltage (Max Rds On, Min Rds On)	3.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	FDZ3N